Articles | Volume 4, issue 2
J. Sens. Sens. Syst., 4, 249–253, 2015
https://doi.org/10.5194/jsss-4-249-2015

Special issue: Sensor/IRS2 2015

J. Sens. Sens. Syst., 4, 249–253, 2015
https://doi.org/10.5194/jsss-4-249-2015

Regular research article 02 Jul 2015

Regular research article | 02 Jul 2015

Investigation of InAsSbP quantum dot mid-infrared sensors

V. G. Harutyunyan1, K. M. Gambaryan1, V. M. Aroutiounian1, and I. G. Harutyunyan2 V. G. Harutyunyan et al.
  • 1Department of Physics of Semiconductors and Microelectronics, Yerevan State University, 1 A. Manoogian, Yerevan 0025, Armenia
  • 2Department of Optics, Yerevan State University, 1 A. Manoogian, Yerevan 0025, Armenia

Abstract. This work presents the results of investigations of a low bias mid-infrared(IR) photoconductive cell (PCC) with InAsSbP quantum dots (QDs). The self-assembled nanostructures were grown on an InAs(100) substrate by modified liquid phase epitaxy. The coarsening of the QDs due to Ostwald ripening was discussed. Hysteresis with a remnant capacitance of 0.483 pF and contra-directional oscillations on the PCC's capacitance–voltage characteristic at 78 K were observed. Additionally, peaks at 3.48, 3.68 and 3.89 μm on the room temperature photoresponse spectrum of a quantum dot photoconductive cell were detected. Room temperature photo-sensing properties were investigated under an irradiation of 3.39 μm as well. At a power density of 0.07 W cm−2, the surface resistance of quantum dot PCC was reduced by up to 7 %. A current responsivity of 0.2 mA W−1 was measured at an applied voltage of 8 mV.

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