Articles | Volume 4, issue 2
J. Sens. Sens. Syst., 4, 249–253, 2015
https://doi.org/10.5194/jsss-4-249-2015

Special issue: Sensor/IRS2 2015

J. Sens. Sens. Syst., 4, 249–253, 2015
https://doi.org/10.5194/jsss-4-249-2015

Regular research article 02 Jul 2015

Regular research article | 02 Jul 2015

Investigation of InAsSbP quantum dot mid-infrared sensors

V. G. Harutyunyan et al.

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Cited articles

Aroutiounian, V. M., Gambaryan, K. M., Harutyunyan, V. G., Soukiassian, P. G., Boeck, T., Schmidtbauer, J., and Bansen, R.: The Ostwald Ripening at Nanoengineering of InAsSbP Spherical and Ellipsoidal Quantum Dots on InAs (100) Surface, J. Contemp. Phys. (Armenian Academy of Sciences), 48, 37–42, 2013.
Bartelt, N. C., Theis, W., and Tromp, R. M.: Ostwald ripening of two-dimensional islands on Si(001), Phys. Rev. B, 54, 11741–11751, 1996.
Bhattacharya, P., Su, X. H., Chakrabarti, S., Ariyawansa, G., and Perera, A. G. U.: Characteristics of a Tunneling Quantum-dot Infrared Photodetector Operating at Room Temperature, Appl. Phys. Lett., 86, 191106-1–1191106-3, 2005.
Gambaryan, K. M.: Nucleation of InAsSbP Quantum, Dots and Pits on InAs(100) Substrate, Nanoscale Res. Lett., 5, 587–591, 2010.
Gambaryan, K. M., Aroutiounian, V. M., and Harutyunyan, V. G.: Photovoltaic and optoelectronic properties of InAs(1 0 0)-based photoconductive cells with quantum dots and nanopits, Infrared Phys. Technol., 54, 114–120, 2011.
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