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Journal of Sensors and Sensor Systems An open-access peer-reviewed journal
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Volume 6, issue 1
J. Sens. Sens. Syst., 6, 121–133, 2017
https://doi.org/10.5194/jsss-6-121-2017
© Author(s) 2017. This work is distributed under
the Creative Commons Attribution 3.0 License.

Special issue: Sensors and Measurement Systems 2016

J. Sens. Sens. Syst., 6, 121–133, 2017
https://doi.org/10.5194/jsss-6-121-2017
© Author(s) 2017. This work is distributed under
the Creative Commons Attribution 3.0 License.

Regular research article 02 Mar 2017

Regular research article | 02 Mar 2017

Transferable micromachined piezoresistive force sensor with integrated double-meander-spring system

Gerry Hamdana1,2, Maik Bertke1,2, Lutz Doering3, Thomas Frank4, Uwe Brand3, Hutomo Suryo Wasisto1,2, and Erwin Peiner1,2 Gerry Hamdana et al.
  • 1Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, 38106 Braunschweig, Germany
  • 2Laboratory for Emerging Nanometrology (LENA), Langer Kamp 6a, 38106 Braunschweig, Germany
  • 3Department 5.1 Surface Metrology, Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig, Germany
  • 4CiS Forschungsinstitut für Mikrosensorik GmbH, Konrad-Zuse-Straße 14, 99099 Erfurt, Germany

Abstract. A developed transferable micro force sensor was evaluated by comparing its response with an industrially manufactured device. In order to pre-identify sensor properties, three-dimensional (3-D) sensor models were simulated with a vertically applied force up to 1000 µN. Then, controllable batch fabrication was performed by alternately utilizing inductively coupled plasma (ICP) reactive ion etching (RIE) and photolithography. The assessments of sensor performance were based on sensor linearity, stiffness and sensitivity. Analysis of the device properties revealed that combination of a modest stiffness value (i.e., (8.19 ± 0.07) N m−1) and high sensitivity (i.e., (15.34 ± 0.14) V N−1) at different probing position can be realized using a meander-spring configuration. Furthermore, lower noise voltage is obtained using a double-layer silicon on insulator (DL-SOI) as basic material to ensure high reliability and an excellent performance of the sensor.

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