Catalytic metal-gate field effect transistors based on SiC for indoor air quality control
- 1Department of Physics, Chemistry and Biology, Applied Sensor Science, Linköping University, 58183 Linköping, Sweden
- 2Department of Physics and Mechatronics Engineering, Lab for Measurement Technology, Saarland University, 66123 Saarbruecken, Germany
Abstract. High-temperature iridium-gated field effect transistors based on silicon carbide have been used for sensitive detection of specific volatile organic compounds (VOCs) in concentrations of health concern, for indoor air quality monitoring and control. Formaldehyde, naphthalene, and benzene were studied as hazardous VOCs at parts per billion (ppb) down to sub-ppb levels. The sensor performance and characteristics were investigated at a constant temperature of 330 °C and at different levels of relative humidity up to 60%, showing good stability and repeatability of the sensor response, and excellent detection limits in the sub-ppb range.