Catalytic metal-gate field effect transistors based on SiC for indoor air quality control

Puglisi, D.; Eriksson, J.; Bur, C.; Schuetze, A.; Lloyd Spetz, A.; Andersson, M.

doi:https://doi.org/10.5194/jsss-4-1-2015

Articles | Volume 4, issue 1

J. Sens. Sens. Syst., 4, 1–8, 2015

https://doi.org/10.5194/jsss-4-1-2015

© Author(s) 2015. This work is distributed under
the Creative Commons Attribution 3.0 License.

Special issue: Advanced functional materials for environmental monitoring...

J. Sens. Sens. Syst., 4, 1–8, 2015

https://doi.org/10.5194/jsss-4-1-2015

© Author(s) 2015. This work is distributed under
the Creative Commons Attribution 3.0 License.

Articles | Volume 4, issue 1

Regular research article

06 Jan 2015

Regular research article | 06 Jan 2015

Catalytic metal-gate field effect transistors based on SiC for indoor air quality control

D. Puglisi¹, J. Eriksson¹, C. Bur^1,2, A. Schuetze², A. Lloyd Spetz¹, and M. Andersson¹ D. Puglisi et al.

Show author details

¹Department of Physics, Chemistry and Biology, Applied Sensor Science, Linköping University, 58183 Linköping, Sweden
²Department of Physics and Mechatronics Engineering, Lab for Measurement Technology, Saarland University, 66123 Saarbruecken, Germany

Received: 27 Aug 2014 – Revised: 23 Oct 2014 – Accepted: 29 Nov 2014 – Published: 06 Jan 2015

Abstract. High-temperature iridium-gated field effect transistors based on silicon carbide have been used for sensitive detection of specific volatile organic compounds (VOCs) in concentrations of health concern, for indoor air quality monitoring and control. Formaldehyde, naphthalene, and benzene were studied as hazardous VOCs at parts per billion (ppb) down to sub-ppb levels. The sensor performance and characteristics were investigated at a constant temperature of 330 °C and at different levels of relative humidity up to 60%, showing good stability and repeatability of the sensor response, and excellent detection limits in the sub-ppb range.