Regular research article
06 Jan 2015
Regular research article | 06 Jan 2015
Catalytic metal-gate field effect transistors based on SiC for indoor air quality control
D. Puglisi1, J. Eriksson1, C. Bur1,2, A. Schuetze2, A. Lloyd Spetz1, and M. Andersson1
D. Puglisi et al.
D. Puglisi1, J. Eriksson1, C. Bur1,2, A. Schuetze2, A. Lloyd Spetz1, and M. Andersson1
- 1Department of Physics, Chemistry and Biology, Applied Sensor Science, Linköping University, 58183 Linköping, Sweden
- 2Department of Physics and Mechatronics Engineering, Lab for Measurement Technology, Saarland University, 66123 Saarbruecken, Germany
- 1Department of Physics, Chemistry and Biology, Applied Sensor Science, Linköping University, 58183 Linköping, Sweden
- 2Department of Physics and Mechatronics Engineering, Lab for Measurement Technology, Saarland University, 66123 Saarbruecken, Germany
Correspondence: D. Puglisi (donatella.puglisi@liu.se)
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Received: 27 Aug 2014 – Revised: 23 Oct 2014 – Accepted: 29 Nov 2014 – Published: 06 Jan 2015
High-temperature iridium-gated field effect transistors based on silicon carbide have been used for sensitive detection of specific volatile organic compounds (VOCs) in concentrations of health concern, for indoor air quality monitoring and control. Formaldehyde, naphthalene, and benzene were studied as hazardous VOCs at parts per billion (ppb) down to sub-ppb levels. The sensor performance and characteristics were investigated at a constant temperature of 330 °C and at different levels of relative humidity up to 60%, showing good stability and repeatability of the sensor response, and excellent detection limits in the sub-ppb range.
