Articles | Volume 4, issue 1
https://doi.org/10.5194/jsss-4-1-2015
https://doi.org/10.5194/jsss-4-1-2015
Regular research article
 | 
06 Jan 2015
Regular research article |  | 06 Jan 2015

Catalytic metal-gate field effect transistors based on SiC for indoor air quality control

D. Puglisi, J. Eriksson, C. Bur, A. Schuetze, A. Lloyd Spetz, and M. Andersson

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Cited articles

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Short summary
This study aims at the development of high-performance and cost-efficient gas sensors for sensitive detection of three specific hazardous gases, i.e., formaldehyde, naphthalene, and benzene, commonly present in indoor environments in concentrations of health concern. We used silicon carbide field effect transistors to investigate the sensor performance and characteristics under different levels of relative humidity up to 60%, demonstrating excellent detection limits in the sub-ppb range.