Articles | Volume 14, issue 1
https://doi.org/10.5194/jsss-14-89-2025
https://doi.org/10.5194/jsss-14-89-2025
Regular research article
 | 
27 May 2025
Regular research article |  | 27 May 2025

Tailored measurement setup for the contactless characterization of MEMS resonators at the wafer level

Dominik Huber, Michael Schneider, Paul Fulmek, Georg Pfusterschmied, and Ulrich Schmid

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Cited articles

Algamili, A. S., Khir, M. H. M., Dennis, J. O., Ahmed, A. Y., Alabsi, S. S., Ba Hashwan, S. S., and Junaid, M. M.: A Review of Actuation and Sensing Mechanisms in MEMS-Based Sensor Devices, Nanoscale Res. Lett., 16, 16, https://doi.org/10.1186/s11671-021-03481-7, 2021. a
Asadi, K., Yu, J., and Cho, H.: Nonlinear couplings and energy transfers in micro- and nano-mechanical resonators: intermodal coupling, internal resonance and synchronization, Philos. T. Roy. Soc. A, 376, 20170141, https://doi.org/10.1098/rsta.2017.0141, 2018. a
Bienstman, J., Tilmans, H. A. C., Peeters, E. J. E. A., Steyaert, M., and Puers, R.: An oscillator circuit for electrostatically driven silicon-based one-port resonators, Sensor. Actuat. A.-Phys., 52, 179–186, https://doi.org/10.1016/0924-4247(96)80146-4, 1996. a
Chandorkar, S. A., Candler, R. N., Duwel, A., Melamud, R., Agarwal, M., Goodson, K. E., and Kenny, T. W.: Multimode thermoelastic dissipation, J. Appl. Phys., 105, 043505, https://doi.org/10.1063/1.3072682, 2009. a
Cioffi, K. R. and Wan-Thai, H.: 32KHz MEMS-based oscillator for low-power applications, in: Proceedings of the 2005 IEEE International Frequency Control Symposium and Exposition, Vancouver, BC, 29–31 August 2005, IEEE, 551–558, https://doi.org/10.1109/FREQ.2005.1573992, 2005. a
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Short summary
Photo-thermal actuation and laser Doppler vibrometry enable fast, contactless characterization of MEMS (microelectromechanical system) resonators already before electrical connections are made. This paper details a tailored setup combining a precision stage, vacuum chamber, laser diode, and vibrometer to analyze silicon MEMS devices on a wafer level. Tests reveal how silicon device layer thickness affects resonance frequency and identify dominant loss mechanisms in different vibrational modes.
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