Journal of Sensors and Sensor Systems
Journal of Sensors and Sensor Systems
JSSS
Articles | Volume 8, issue 2
Articles | Volume 8, issue 2
https://doi.org/10.5194/jsss-8-261-2019
© Author(s) 2019. This work is distributed under
the Creative Commons Attribution 4.0 License.
https://doi.org/10.5194/jsss-8-261-2019
© Author(s) 2019. This work is distributed under
the Creative Commons Attribution 4.0 License.
Articles | Volume 8, issue 2
Regular research article
 | 
02 Aug 2019
Regular research article |  | 02 Aug 2019

Enabling a new method of dynamic field-effect gas sensor operation through lithium-doped tungsten oxide

Marius Rodner, Manuel Bastuck, Andreas Schütze, Mike Andersson, Joni Huotari, Jarkko Puustinen, Jyrki Lappalainen, and Tilman Sauerwald

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Short summary
To fulfil today's requirements, gas sensors have to become more and more sensitive and selective. In this work, we present a novel method to significantly enhance the effect of gate bias on the response of a SiC field-effect transistor by placing a lithium-doped tungsten oxide film beneath the gate. This enhancement, compared to undoped samples, opens new perspectives for static and transient signal generation, e.g. gate bias-cycled operation, and, thus, increasing sensitivity and selectivity.
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