Journal of Sensors and Sensor Systems
Journal of Sensors and Sensor Systems
JSSS
Articles | Volume 8, issue 2
Articles | Volume 8, issue 2
https://doi.org/10.5194/jsss-8-261-2019
© Author(s) 2019. This work is distributed under
the Creative Commons Attribution 4.0 License.
https://doi.org/10.5194/jsss-8-261-2019
© Author(s) 2019. This work is distributed under
the Creative Commons Attribution 4.0 License.
Articles | Volume 8, issue 2
Regular research article
 | 
02 Aug 2019
Regular research article |  | 02 Aug 2019

Enabling a new method of dynamic field-effect gas sensor operation through lithium-doped tungsten oxide

Marius Rodner, Manuel Bastuck, Andreas Schütze, Mike Andersson, Joni Huotari, Jarkko Puustinen, Jyrki Lappalainen, and Tilman Sauerwald

Viewed

Total article views: 2,665 (including HTML, PDF, and XML)
HTML PDF XML Total Supplement BibTeX EndNote
2,123 481 61 2,665 219 72 68
  • HTML: 2,123
  • PDF: 481
  • XML: 61
  • Total: 2,665
  • Supplement: 219
  • BibTeX: 72
  • EndNote: 68
Views and downloads (calculated since 02 Aug 2019)
Cumulative views and downloads (calculated since 02 Aug 2019)

Viewed (geographical distribution)

Total article views: 2,133 (including HTML, PDF, and XML) Thereof 2,045 with geography defined and 88 with unknown origin.
Country # Views %
  • 1
1
 
 
 
 

Cited

Latest update: 23 Nov 2024
Download
Short summary
To fulfil today's requirements, gas sensors have to become more and more sensitive and selective. In this work, we present a novel method to significantly enhance the effect of gate bias on the response of a SiC field-effect transistor by placing a lithium-doped tungsten oxide film beneath the gate. This enhancement, compared to undoped samples, opens new perspectives for static and transient signal generation, e.g. gate bias-cycled operation, and, thus, increasing sensitivity and selectivity.
Read more