Articles | Volume 8, issue 2
https://doi.org/10.5194/jsss-8-261-2019
https://doi.org/10.5194/jsss-8-261-2019
Regular research article
 | 
02 Aug 2019
Regular research article |  | 02 Aug 2019

Enabling a new method of dynamic field-effect gas sensor operation through lithium-doped tungsten oxide

Marius Rodner, Manuel Bastuck, Andreas Schütze, Mike Andersson, Joni Huotari, Jarkko Puustinen, Jyrki Lappalainen, and Tilman Sauerwald

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Cited articles

Andersson, M., Pearce, R., and Lloyd Spetz, A.: New generation SiC based field effect transistor gas sensors, Sensors Actuators B Chem., 179, 95–106, https://doi.org/10.1016/j.snb.2012.12.059, 2013. 
Baserga, A., Russo, V., Di Fonzo, F., Bailini, A., Cattaneo, D., Casari, C. S., Li Bassi, A., and Bottani, C. E.: Nanostructured tungsten oxide with controlled properties: Synthesis and Raman characterization, Thin Solid Films, 515, 6465–6469, https://doi.org/10.1016/j.tsf.2006.11.067, 2007. 
Bastuck, M., Bur, C., Lloyd Spetz, A., Andersson, M., and Schütze, A.: Gas identification based on bias induced hysteresis of a gas-sensitive SiC field effect transistor, J. Sens. Sens. Syst., 3, 9–19, https://doi.org/10.5194/jsss-3-9-2014, 2014. 
Baur, T., Schütze, A., and Sauerwald, T.: Optimierung des temperaturzyklischen Betriebs von Halbleitergassensoren, Tech. Mess., 82, 187–195, https://doi.org/10.1515/teme-2014-0007, 2015. 
Berggren, L.: Optical Absorption and Electrical Conductivity in Lithium Intercalated Amorphous Tungsten Oxide Films, Uppsala University, 2004. 
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Short summary
To fulfil today's requirements, gas sensors have to become more and more sensitive and selective. In this work, we present a novel method to significantly enhance the effect of gate bias on the response of a SiC field-effect transistor by placing a lithium-doped tungsten oxide film beneath the gate. This enhancement, compared to undoped samples, opens new perspectives for static and transient signal generation, e.g. gate bias-cycled operation, and, thus, increasing sensitivity and selectivity.