Articles | Volume 5, issue 1
Regular research article
08 Jun 2016
Regular research article |  | 08 Jun 2016

Offset stable piezoresistive high-temperature pressure sensors based on silicon

Robert Täschner, Erik Hiller, and Michael Blech

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Cited articles

Blech, M., Übensee, H., Täschner, R., Brokmann, G., Xu, X., and Ortlepp, T.: Zeitkonstanten für die Relaxation thermomechanischer Spannungen in Silizium-Glas, 6th Mikrosystemtechnik-Kongress, 26–28 October 2015, Karlsruhe, Germany, 2015.
Bring, M.: Method for measuring fracture toughness of wafer-bonded interfaces with high spatial resolution, J. Micromech. Microeng., 16, S68–S74, 2006.
Burns, D. W.: “Micromechanical integrated sensors and the planar processed pressure transducer”, PhD work, University of Wisconsin, Madison, WI, USA, 1988.
Celler, G. K. and Cristoloveanu, S.: Frontiers of silicon-on-insulator, J. Appl. Phys., 93, 4955–4978, 2003.
Chung, G. S.: Fabrication and Characterization of a Polycrystalline 3C-SiC Piezoresistive Micro-pressure Sensor, J. Korean Phys. Soc., 56, No. 6, 1759–1762, 2010.
Short summary
The exploitation of new application fields and the drive to size reduction even in highly stable pressure sensing systems makes the extension of the operating temperature range of the microelectromechanical sensors (MEMS) essential. For this reason, a silicon-based pressure sensor with an application temperature ranging up to 300 °C and the associated manufacturing technology was developed. The evolved sensor has an excellent stability and is uncomplicated to mount due to its stress insensitivity.