Articles | Volume 4, issue 1
J. Sens. Sens. Syst., 4, 133–136, 2015

Special issue: 17th ITG/GMA-Conference on Sensors and Measurement Systems...

J. Sens. Sens. Syst., 4, 133–136, 2015

Regular research article 31 Mar 2015

Regular research article | 31 Mar 2015

High-temperature piezoresistive C / SiOC sensors

F. Roth et al.

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Cited articles

Dresselhaus, M. S., Dresselhaus, G., and Hofmann, H.: Raman spectroscopy as a probe of graphene and carbon nanotubes, Phil. Trans. R. Soc. A, 366, 231–236, 2008.
Ferrari, A. C. and Robertson J.: Interpretation of Raman Spectra of disordered and amorphous carbon, Phys. Rev. B, 61, 14095–14107, 2000.
Ferrari, A. C. and Robertson, J.: Raman spectroscopy of amorphous, nanostructured, diamond-like carbon, and nanodiamond, Phil. Trans. R. Soc. Lond. A, 362, 2477–2512, 2004.
Fraga, M. A., Furlan, H., Pessoa, R. S., Rasia, L. A., and Mateus, C. F. R.: Studies on SiC, DLC and TiO2 thin films as piezoresistive sensor materials for high temperature application, Microsyst. Technol., 18, 1027–1033, 2012.
Gregory, O. J., Luo, Q., Bienkiewicz, J. M., Erwin, B. M., and Crisman, E. E.: An apparent n to p transition in reactively sputtered indium-tin-oxide high temperature strain gages, Thin Solid Films, 405, 263–269, 2002.
Short summary
We report on the high-temperature piezoresistivity of carbon-containing silicon oxycarbide nanocomposites (C/SiOC). The piezoresistive behavior of the C/SiOC nanocomposites relies on the presence of dispersed nanocrystalline graphite and non-crystalline carbon domains. In comparison to highly ordered carbon, C/SiOC exhibits strongly enhanced sensitivities, even at high temperatures. Thus, k values of ca. 80 at the highest temperature reading, 1200°C, reveal that C/SiOC is a primary candidate.