Articles | Volume 3, issue 1
J. Sens. Sens. Syst., 3, 9–19, 2014
https://doi.org/10.5194/jsss-3-9-2014
J. Sens. Sens. Syst., 3, 9–19, 2014
https://doi.org/10.5194/jsss-3-9-2014
Regular research article
17 Jan 2014
Regular research article | 17 Jan 2014

Gas identification based on bias induced hysteresis of a gas-sensitive SiC field effect transistor

M. Bastuck et al.

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Cited articles

Andersson, M., Pearce, R., and Lloyd Spetz, A.: New generation SiC based field effect transistor gas sensors, Sens. Actuators B., 179, 95–106, 2013.
Bastuck, M., Bur, C., Lloyd Spetz, A., Andersson, M., and Schütze, A.: Identification of ammonia and carbon monoxide based on the hysteresis of a gas-sensitive SiC field effect transistor, Proc. Transducers 2013, Barcelona, Spain, 2013.
Bur, C., Andersson, M., Lloyd Spetz, A., and Schütze, A.: Influence of a changing gate bias on the sensing properties of SiC field effect gas sensors, Proc. IMCS 2012, Nuremberg, Germany, 140–143, 2012a.
Bur, C., Reimann, P., Andersson, M., Schütze, A., and Lloyd Spetz, A.: Increasing the selectivity of Pt-gate SiC field effect gas sensors by dynamic temperature modulation, IEEE Sensors Journal, 12, 1906–1913, 2012b.
Bur, C., Bastuck, M., Andersson, M., Lloyd Spetz, A., and Schütze, A.: Combination of Temperature Cycled And Gate Bias Cycled Operation To Enhance the Selectivity of SiC-FET Gas Sensors, Proc. Transducers 2013, Barcelona, Spain, 2041–2044, 2013.
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