Articles | Volume 13, issue 1
https://doi.org/10.5194/jsss-13-109-2024
https://doi.org/10.5194/jsss-13-109-2024
Regular research article
 | 
22 May 2024
Regular research article |  | 22 May 2024

Optical and tactile measurements on SiC sample defects

Jana Grundmann, Bernd Bodermann, Elena Ermilova, Matthias Weise, Andreas Hertwig, Petr Klapetek, Jila Rafighdoost, and Silvania F. Pereira

Related subject area

Sensor principles and phenomena: Optical and infrared sensors
Miniaturized two-chamber photoacoustic CO2 sensor with a wafer-bonded MEMS (micro-electro-mechanical systems) detector
Simon Gaßner, Simon Essing, David Tumpold, Katrin Schmitt, and Jürgen Wöllenstein
J. Sens. Sens. Syst., 13, 219–226, https://doi.org/10.5194/jsss-13-219-2024,https://doi.org/10.5194/jsss-13-219-2024, 2024
Short summary
Concatenated Bragg grating fiber-optic sensors for simultaneous measurement of curvature, temperature, and axial pressure
Sohrab Shojaei Khatouni, Sven Zakowski, Reza Hosseini Vedad, Mustafa Masjedi, Akram Askar, Jan Christian Eli Ewald, and Hoc Khiem Trieu
J. Sens. Sens. Syst., 13, 147–155, https://doi.org/10.5194/jsss-13-147-2024,https://doi.org/10.5194/jsss-13-147-2024, 2024
Short summary
Investigation of the degree of cross-linking of polyethylene and thermosets using absolute optical spectroscopy and Raman microscopy
Florian Bergmann, Norbert Halmen, Claudia Scalfi-Happ, Dominik Reitzle, Alwin Kienle, Linda Mittelberg, Benjamin Baudrit, Thomas Hochrein, and Martin Bastian
J. Sens. Sens. Syst., 12, 175–185, https://doi.org/10.5194/jsss-12-175-2023,https://doi.org/10.5194/jsss-12-175-2023, 2023
Short summary
Compact silicon-based attenuated total reflection (ATR) sensor module for liquid analysis
Armin Lambrecht, Carsten Bolwien, Hendrik Fuhr, Gerd Sulz, Annett Isserstedt-Trinke, André Magi, Steffen Biermann, and Jürgen Wöllenstein
J. Sens. Sens. Syst., 12, 123–131, https://doi.org/10.5194/jsss-12-123-2023,https://doi.org/10.5194/jsss-12-123-2023, 2023
Short summary
Real-time active-gas imaging of small gas leaks
Max Bergau, Thomas Strahl, Benjamin Scherer, and Jürgen Wöllenstein
J. Sens. Sens. Syst., 12, 61–68, https://doi.org/10.5194/jsss-12-61-2023,https://doi.org/10.5194/jsss-12-61-2023, 2023
Short summary

Cited articles

Alves, L. F. S., Gomes, R. C. M., Lefranc, P., de A. Pegado, R., Jeannin, P.-O., Luciano, B. A., and Rocha, F. V.: SiC power devices in power electronics: An overview, in: 2017 Brazilian Power Electronics Conference (COBEP), Juiz de Fora, Brazil, 19–22 November 2017, IEEE, 1–8, https://doi.org/10.1109/COBEP.2017.8257396, 2017. a
Aspnes, D. E.: The Accurate Determination of Optical Properties by Ellipsometry, in: Handbook of Optical Constants of Solids, edited by: Palik, E. D., Academic Press, 89–112, ISBN: 0-12-544420-6, 1985. a
Azzam, R. M. A. and Bashara, N. M.: Ellipsometry and Polarized Light, North-Holland, New York, ISBN 0720406943, 1977. a
Benamara, M., Zhang, X., Skowronski, M., Ruterana, P., Nouet, G., Sumakeris, J. J., Paisley, M. J., and O'Loughlin, M. J.: Structure of the carrot defect in 4H-SiC epitaxial layers, Appl. Phys. Lett., 86, 021905-1–021905–3, https://doi.org/10.1063/1.1849416, 2005. a, b
Chen, P.-C., Miao, W.-C., Ahmed, T., Pan, Y.-Y., Lin, C.-L., Chen, S.-C., Kuo, H.-C., Tsui, B.-Y., and Lien, D.-H.: Defect Inspection Techniques in SiC, Nanoscale Res. Lett., 17, 30, https://doi.org/10.1186/s11671-022-03672-w, 2022. a, b, c, d
Download
Short summary
In power electronics, materials like silicon carbide (SiC) are increasingly being used instead of silicon. They have a lot of advantages but also require defect inspection with high accuracy. Different defect types on SiC samples are measured with various methods to determine which one is most suitable for which defect. In conclusion, each examined measurement method is sensitive to the studied defects, although they differ in speed and specialized application fields.