Articles | Volume 13, issue 1
https://doi.org/10.5194/jsss-13-109-2024
https://doi.org/10.5194/jsss-13-109-2024
Regular research article
 | 
22 May 2024
Regular research article |  | 22 May 2024

Optical and tactile measurements on SiC sample defects

Jana Grundmann, Bernd Bodermann, Elena Ermilova, Matthias Weise, Andreas Hertwig, Petr Klapetek, Jila Rafighdoost, and Silvania F. Pereira

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Cited articles

Alves, L. F. S., Gomes, R. C. M., Lefranc, P., de A. Pegado, R., Jeannin, P.-O., Luciano, B. A., and Rocha, F. V.: SiC power devices in power electronics: An overview, in: 2017 Brazilian Power Electronics Conference (COBEP), Juiz de Fora, Brazil, 19–22 November 2017, IEEE, 1–8, https://doi.org/10.1109/COBEP.2017.8257396, 2017. a
Aspnes, D. E.: The Accurate Determination of Optical Properties by Ellipsometry, in: Handbook of Optical Constants of Solids, edited by: Palik, E. D., Academic Press, 89–112, ISBN: 0-12-544420-6, 1985. a
Azzam, R. M. A. and Bashara, N. M.: Ellipsometry and Polarized Light, North-Holland, New York, ISBN 0720406943, 1977. a
Benamara, M., Zhang, X., Skowronski, M., Ruterana, P., Nouet, G., Sumakeris, J. J., Paisley, M. J., and O'Loughlin, M. J.: Structure of the carrot defect in 4H-SiC epitaxial layers, Appl. Phys. Lett., 86, 021905-1–021905–3, https://doi.org/10.1063/1.1849416, 2005. a, b
Chen, P.-C., Miao, W.-C., Ahmed, T., Pan, Y.-Y., Lin, C.-L., Chen, S.-C., Kuo, H.-C., Tsui, B.-Y., and Lien, D.-H.: Defect Inspection Techniques in SiC, Nanoscale Res. Lett., 17, 30, https://doi.org/10.1186/s11671-022-03672-w, 2022. a, b, c, d
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Short summary
In power electronics, materials like silicon carbide (SiC) are increasingly being used instead of silicon. They have a lot of advantages but also require defect inspection with high accuracy. Different defect types on SiC samples are measured with various methods to determine which one is most suitable for which defect. In conclusion, each examined measurement method is sensitive to the studied defects, although they differ in speed and specialized application fields.