Journal of Sensors and Sensor Systems
Journal of Sensors and Sensor Systems
JSSS
Articles | Volume 12, issue 1
Articles | Volume 12, issue 1
https://doi.org/10.5194/jsss-12-69-2023
© Author(s) 2023. This work is distributed under
the Creative Commons Attribution 4.0 License.
https://doi.org/10.5194/jsss-12-69-2023
© Author(s) 2023. This work is distributed under
the Creative Commons Attribution 4.0 License.
Articles | Volume 12, issue 1
Regular research article
 | 
27 Feb 2023
Regular research article |  | 27 Feb 2023

Gauge to simultaneously determine the electrical conductivity, the Hall constant, and the Seebeck coefficient up to 800 °C

Robin Werner, Jaroslaw Kita, Michael Gollner, Florian Linseis, and Ralf Moos

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J. Sens. Sens. Syst., 12, 9–19, https://doi.org/10.5194/jsss-12-9-2023,https://doi.org/10.5194/jsss-12-9-2023, 2023
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Cited articles

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ASTM International: Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors, https://doi.org/10.1520/F0076-08R16E01, 2016. 
Bentley, R. E.: Theory and practice of thermoelectric thermometry, Handbook of temperature measurement, Vol. 3, Springer, Singapore, 245 pp., ISBN 978-9814021111, 1998. 
Bernhard, F. (Ed.): Handbuch der Technischen Temperaturmessung, 2. Aufl. 2014, VDI-Buch, Springer, Berlin, Heidelberg, 1619 pp., ISBN 978-3-642-24505-3, 2014. 
Borup, K. A., Boor, J. de, Wang, H., Drymiotis, F., Gascoin, F., Shi, X., Chen, L., Fedorov, M. I., Müller, E., Iversen, B. B., and Snyder, G. J.: Measuring thermoelectric transport properties of materials, Energy Environ. Sci., 8, 423–435, https://doi.org/10.1039/C4EE01320D, 2015. 
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A high-temperature gauge to simultaneously determine electrical conductivity, the Hall constant, and the Seebeck coefficient was developed. Screen-printed heating structures on a ceramic sample holder generate temperatures up to 800 °C. Heating structures were designed using FEM simulations. The temperature distribution was validated by thermal imaging. Measurements on constantan (reference material) and boron-doped silicon wafer confirm the functionality of the gauge up to 800 °C.
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